If you have an application in which a MOSFET is already used to switch a load, it is relatively easy to add short-circuit or overload protection. Here we make use of the internal resistance RDS(ON), ...
Transphorm, a developer of GaN power semiconductors, has successfully demonstrated up to 5 microsecond short circuit withstand time (SCWT) on a GaN power transistor with a patented technology. The ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in GaN power semiconductors, the future of next generation power systems, today announced it has demonstrated up to 5 ...
Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for ...
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