Santa Clara, CA and Kyoto, Japan, May 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced mass production of 650V GaN (Gallium Nitride) HEMTs GNP1070TC-Z and GNP1150TCA-Z optimized for a ...
Santa Clara, CA and Kyoto, Japan, March 21, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced ultra-high-speed control IC technology that maximizes the performance of GaN and other ...
Japan-based Rohm Semiconductor and Taiwan Semiconductor Manufacturing Company (TSMC) have announced a strategic partnership to advance the development and mass production of gallium nitride (GaN) ...
Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds ...
While over 70% of today’s high-voltage power converters use a ‘two-stage’ topology, a single-stage bi-directional switch (BDS) converter claims to achieve up to 10% cost savings, 20% energy savings, ...
Santa Clara, CA and Kyoto, Japan, May 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they will present new power semiconductor solutions, with a special focus on wide bandgap devices, ...
A new gallium nitride (GaN) IC aims to serve 48-V or 60-V battery management systems (BMS) for home batteries, portable charging stations, e-scooters, and e-bikes. This 100-V bi-directional IC can ...
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