Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...

The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...

The CPC5608 is a 5-channel, low power transistor array integrated circuit featuring extremely low static current draw from power supply in a simple 2-state logic control input. It has two state ...

MUNICH, Germany — Researchers from Infineon Technologies AG have shown how it may be possible to use carbon nanotubes (CNTs) to build power semiconductor devices. Conventional power devices are ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

This whitepaper gives a compact overview of the recommended gate drive concepts for both GIT (gate injection transistor) and SGT (Schottky gate transistor) product families. A versatile standard drive ...