Advanced Micro Devices has developed two sets of next-generation transistors using different approaches that produce higher levels of performance than conventional transistors, the company said at the ...
Insulated Gate Bipolar Transistor (IGBT) technologies have evolved significantly over recent decades to meet the stringent requirements of high-power and high-efficiency applications. Combining the ...
A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, Johannes Kepler University, Universidad de Granada, and Max Planck Institute for ...
A team of scientists from the Institute for Basic Science has developed a revolutionary technique for producing 1D metallic materials with a width of less than 1 nm by epitaxial growth. Using this ...
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