These releases underscore NoMIS Power's continued expansion toward higher-voltage and higher-current SiC devices and mark NoMIS' first 1.7 kV SiC MOSFET offering, with high-resistance small-die ...
Problem: your electronic load works fine, except for the occasional MOSFET bursting into flames. Solution: do what [tbladykas] did, and build a water-cooled electronic load. One can quibble that ...
[Kerry Wong] had some extreme MOSFETs (IXTK90N25L2) and decided to create a high current electronic load. The result was a two-channel beast that can handle 50 A per channel. Together, they can sink ...
Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
In recent years, automotive low-voltage MOSFETs have been trending toward smaller packages, such as the 5060-size and even more compact options. However, this miniaturization introduces significant ...
New Renesas Wafer Technology Delivers 30 Percent Lower On-resistance, 40 Percent Reduction in Gate-Drain Charge, and 50 Percent Smaller Package Size TOKYO--(BUSINESS WIRE)-- Renesas Electronics ...
EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...
SEOUL, South Korea--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the expansion of production for its 7th generation 1)MXT LV MOSFETs, ...
New switching powertransistors usingwide-bandgap semiconductors,such asSiC (silicon carbide)and GaN (galliumnitride) on silicon, will likely continueto significantly increase ...
In the wake of gallium-nitride (GaN) transistor introductions, a number of semiconductor makers have begun to reassess the role played by conventional MOSFETs. The introduction of GaN devices doesn’t ...
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