The lateral structure is currently the most widely used of the various GaN transistor structures. High-electron–mobility transistors (HEMTs) made of gallium nitride are lateral devices that use a ...
Electric vehicles, converters for charging infrastructure, energy storage systems, solar and wind power plants or new types of heat pumps — key technologies for the energy transition rely on ...
Gallium nitride (GaN) HEMT based power transistors are fast becoming adopted for many high power amplifier applications from CW to pulsed or modulated requirements. The key advantage of GaN HEMT ...
MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the addition of new space screened versions of its popular 100 V, 90 A and 650 V, 30 A high reliability gallium nitride high electron ...
Taiwan's epi-wafer supplier Intelligent Epitaxy Technology (IntelliEPI) has started taking orders for its high-performance GaN-based HEMT products, which are expected to serve as another growth driver ...
Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...
(Nanowerk Spotlight) Advances in semiconductor technology have reached a critical turning point. Silicon-based transistor technology, central to electronics, faces increasing limitations due to the ...
How GaN is used in DC-DC power converters. Challenges and advantages of using GaN semiconductors. When designers need high-voltage to low-voltage DC-DC converter designs, both the input and output ...
The power semiconductor evolution started with germanium and selenium devices that succumbed to silicon types around the 1950s. Broader silicon usage stemmed from its improved physical properties ...
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