This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

The basic construction of Bipolar Junction Transistor (BJT) comprises of two P-N junctions producing three connecting terminals with each terminal being given a name to identify it from the other two.

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

In the early days, PNP bipolar transistors were common, but the bulk of circuits you see today use NPN transistors. As [Aaron Danner] points out, many people think PNP transistors are “backward” but ...

How many remote controls do you have in your home? Don’t you wish all these things were better integrated somehow, or that you could add remote control functionality to a random device? It’s a common ...

Indium selenide (InSe), a next-generation 2D semiconductor nanomaterial, has seen attention for its superior electron mobility compared to silicon semiconductors and a saturation speed more than twice ...

Bipolar transistors, essential components in a myriad of electronic devices, are highly susceptible to the adverse impacts of radiation. Ionising radiation introduces defects within the semiconductor ...

Transistors are three-terminal semiconductor devices. One terminal controls electrical resistance or current flow between the other two terminals, giving transistors a valvelike operation. Transistors ...

The first transistor was successfully demonstrated at Bell Laboratories in Murray Hill, New Jersey, in 1947. This three-terminal device has spawned many of the electronics devices that make possible ...