Dallas—Diodes Inc. has released 21 medium-power bipolar junction transistors in its SOT89-3L package. The devices are suitable for a wide range of high volume applications, which include switching and ...
A reconfigurable device that can be a p-n diode, a MosFET or a BJT has been made by researchers at SUNY-Polytechnic Institute in Albany, New York. “We can form a single device that can perform the ...
CATALOG DESCRIPTION: Fundamental concepts in electronics. Diode, BJT and FET Circuits; design using ideal operational amplifiers; feedback; frequency response; biasing; current sources and mirrors; ...
The expanded lineup are designed to run without interruption at junction temperatures as high as 175°C. Credit: Ju Jae-young/Shutterstock.com. US-based semiconductor manufacturer Diodes has added new ...
The converter described below, based on a silicon bipolarjunction transistor (BJT), can operate at as low as 250 mV, which is probably a record for a converter not based on a JFET or germanium ...
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